The basic principle of magnetron sputtering is to change the direction of electron motion with a magnetic field，Restricting and prolonging the motion path of electrons，Improved the ionization probability of electrons and effectively utilized their energy。therefore，In the formation of high-density plasma glow discharge，The sputtering of the target material caused by positive ion bombardment is more effective，Electrons bound by orthogonal electromagnetic fields can only deposit on the substrate when their energy is about to be depleted。This is what magnetron sputtering has“low temperature”、“high speed”The mechanism of two major characteristics。

The main advantages of magnetron sputtering are as follows：

（1）Various materials used to prepare target materials can be used as thin film materials，Including various metals、semiconductor、Ferromagnetic material，And insulating oxides、ceramics、Polymer and other substances，Especially suitable for depositing coatings on materials with high melting points and low vapor pressures；

（2）Multi element target co sputtering method under appropriate conditions，A mixture of sedimentable required components、Compound film；

（3）Add oxygen to the sputtering discharge atmosphere、Nitrogen or other reactive gases，Deposition of compound thin films that can form target materials and gas molecules；

（4）Control the air pressure in the vacuum chamber、sputtering power ，Basically, a stable sedimentation rate can be obtained，By precisely controlling the sputtering coating time，Easy to obtain uniform high-precision film thickness，And it has good repeatability；

（5）Sputtered particles are almost unaffected by gravity，Target and substrate positions can be freely arranged；The adhesion strength between the substrate and the film is generally the same as that of a vapor deposited film10More than double，And due to the high energy of sputtered particles，On the film-forming surface, it will continue to diffuse and obtain a hard and dense thin film，At the same time, high energy allows the substrate to obtain a crystalline film at a lower temperature；

（6）High nucleation density in the early stage of film formation，Therefore, thickness can be producedlOnmThe following ultra-thin continuous film